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| inchange semiconductor isc product specification isc silicon npn power transistor 2SD330 description c ollector-emitter breakdown voltage- : v (br)ceo = 50v(min) low colle ctor-emitter saturation voltage- : v ce(sat) = 1.0v(max) @i c = 2.0a complement to type 2sb514 applications especially suited for use in output stage of 10w af power amplifier. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 50 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 5 v i c collector current-continuous 2 a i cm collector current-peak 5 a collector power dissipation @ t a =25 1.75 p c collector power dissipation @ t c =25 20 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD330 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 10ma ; i b = 0 50 v v ce (sat) collector-emitter saturation voltage i c = 2a; i b = 0.2a b 1.0 v v be( on ) base-emitter on voltage i c = 1a; v ce = 5v 1.5 v i cbo collector cutoff current v cb = 20v; i e = 0 100 a i ebo emitter cutoff current v eb = 4v; i c = 0 1.0 ma h fe-1 dc current gain i c = 1a ; v ce = 2v 40 320 h fe-2 dc current gain i c = 0.1a ; v ce = 2v 35 f t current-gain?bandwidth product i c = 0.5a; v ce = 5v 8 mhz ? h fe- 1 classifications c d e f 40-80 60-120 100-200 160-320 isc website www.iscsemi.cn 2 |
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